The Hall voltage of a Hall sensor depends on several factors, including the strength of the magnetic field, the current flowing through the sensor, the type of material used in the sensor, and the geometry of the sensor itself.

The Hall sensor is based on the Hall effect (the Hall effect is a type of magnetoelectric effect, which was discovered by American physicist Hall (A. H. Hall, 1855–1938) in 1879 while studying the conductivity of metals. When an electric current passes through a conductor perpendicular to an external magnetic field, a potential difference appears between the two ends of the conductor that are perpendicular to the magnetic field and the direction of the current. This phenomenon is known as the Hall effect. This potential difference is also called Hall voltage, and it is used to make a type of magnetic field sensor.

It was later discovered that semiconductors, conductive fluids, and others also exhibit this effect, and the Hall effect in semiconductors is much stronger than in metals. Various Hall elements made using this phenomenon are widely used in industrial automation technology, detection technology, and information processing, among other areas. The Hall effect is a fundamental method for studying the properties of semiconductor materials. The Hall coefficient determined through Hall effect experiments can be used to assess important parameters such as the conductivity type, carrier concentration, and carrier mobility of semiconductor materials.